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D2118

LowVCE(sat)transistor(strobeflash)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DGD2118

SINGLECHANNELGATEDRIVER

DIODES

Diodes Incorporated

DGD2118

SINGLECHANNELGATEDRIVER

Features -FloatingChannelinBootstrapOperationto600V -DrivesOneN-ChannelMOSFETorIGBT -OutputsToleranttoNegativeTransients -WideLogicSupply:10Vto20V -SchmittTriggeredLogicInputwithInternalPullDown -UndervoltageLockout -ExtendedTemperatureRange:-40°Cto+1

DIODES

Diodes Incorporated

DS2118M

Ultra2LVD/SESCSITerminator

DESCRIPTION TheDS2118MUltra2LVD/SESCSITerminatorisbothaLowVoltageDifferential(LVD)andSingle-Ended(SE)terminator.ThemultimodeoperationenablesthedesignertoimplementLVDincurrentproductswhileallowingtheend-userSEbackwardcompatibilitywithlegacydevices.Ifthedevi

Dallas

Dallas Semiconductor

DS2118MB

Ultra3LVD/SESCSITerminator

DETAILEDDESCRIPTION TheDS2118MUltra3LVD/SESCSIterminatorisbothalow-voltagedifferential(LVD)andsingle-ended(SE)terminator.ThemultimodeoperationenablesthedesignertoimplementLVDincurrentproductswhileallowingtheend-userSE-backwardcompatibilitywithlegacydevices.If

MaximMaxim Integrated Products

美信美信半導(dǎo)體

DS2118MB/T,R

Ultra3LVD/SESCSITerminator

DETAILEDDESCRIPTION TheDS2118MUltra3LVD/SESCSIterminatorisbothalow-voltagedifferential(LVD)andsingle-ended(SE)terminator.ThemultimodeoperationenablesthedesignertoimplementLVDincurrentproductswhileallowingtheend-userSE-backwardcompatibilitywithlegacydevices.If

MaximMaxim Integrated Products

美信美信半導(dǎo)體

DS2118MB-T,R

Ultra3LVD/SESCSITerminator

DETAILEDDESCRIPTION TheDS2118MUltra3LVD/SESCSIterminatorisbothalow-voltagedifferential(LVD)andsingle-ended(SE)terminator.ThemultimodeoperationenablesthedesignertoimplementLVDincurrentproductswhileallowingtheend-userSE-backwardcompatibilitywithlegacydevices.If

MaximMaxim Integrated Products

美信美信半導(dǎo)體

EM2118

PluggableTerminalBlockwithFlanges;(MateswithEM2218Series);5.08Centers

EATONEaton All Rights Reserved.

伊頓伊頓公司

ENA2118A

AFControlLSI

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ENA2118A

AFControlLSI

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

FM2118

SinglelithiumbatteryprotectionIC

FUMANSHENZHEN FUMAN ELECTRONICS CO., LTD.

富滿微電子深圳市富滿微電子集團(tuán)股份有限公司

FTD2118

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●LowVCE(sat). ●ExcellentDCCurrentGainCharacteristics.

FS

First Silicon Co., Ltd

FTD2118I

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●LowVCE(sat). ●ExcellentDCCurrentGainCharacteristics.

FS

First Silicon Co., Ltd

GSC2118

1.5ACMOSLOWDROPOUTVOLTAGEREGULATOR

Description TheGSC2118ofpositive,linearregulatorfeaturelowgroundcurrent(45μAtyp.)withlowdropoutvoltage,makingthemidealforbatteryapplications. Outputvoltagesaresetatthefactoryandtrimmedto1.5accuracy. TheseruggeddeviceshavebothThermalShutdown,andCurrentFo

GTM

勤益投資控股股份有限公司

GSC2118

1.5ACMOSLowDropoutVoltageRegulator

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GUE2118

USB2.0BoosterExtensionCable-39ft(TAACompliant)

IOGEAR

iogear

HSD2118J

LOWVCE(sat)TRANSISTOR(20V,5A)

Feature ?LowVCE(sat),VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) ?ExcellentDCCurrentGainCharacteristic ?ComplementstheHSB1386J Structure EpitaxialPlanarTypeNPNSiliconTransistor

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HY2118

BatteryPacksProtectionICs

HYCONHYCON inc

纮康科技纮康科技公司

IR2118

Gatedrivesupplyrangefrom10to20V

Description TheIR2117/IR2118(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriver.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSoutputs.Theoutputdriverfeaturesahighpulsecurrentbuf

IRF

International Rectifier

IR2118

SINGLECHANNELDRIVER

Description TheIR2117/IR2118(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriver.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSoutputs.Theoutputdriverfeaturesahighpulsecurrentbuf

IRF

International Rectifier

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更多CNXCX2118供應(yīng)商 更新時(shí)間2024-10-25 16:05:00