首頁(yè) >CMXD2004SR>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CMXD2004SR | SURFACE MOUNT SUPERmini DUAL, IN-SERIES HIGH VOLTAGE SWITCHING DIODES DESCRIPTION: TheCENTRALSEMICONDUCTORCMXD2004SandCMXD2004SRconsistsofdual,in-seriespairsofhighvoltagesiliconswitchingdiodes,manufacturedinaSUPERmini?SOT-26surfacemountpackage,anddesignedforhighvoltageswitchingapplications.Thisdevicecanbeconfiguredasa1200Vswi | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | |
CMXD2004SR | SURFACE MOUNT DUAL PAIR, IN-SERIES HIGH VOLTAGE SILICON SWITCHING DIODES | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | |
包裝:管件 描述:DIODE ARRAY 240V 200MA SOT26 | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | ||
包裝:管件 描述:DIODE ARRAY 240V 200MA SOT26 | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | ||
包裝:管件 描述:DIODE ARRAY 240V 200MA SOT26 | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | ||
SUPERminiTMTRIPLEISOLATEDOPPOSINGSURFACEMOUNTHIGHVOLTAGESWITCHINGDIODE DESCRIPTION: TheCENTRALSEMICONDUCTORCMXD2004TOconsistsofthree(3)IsolatedHighVoltageSiliconSwitchingDiodesarrangedinanalternatingconfigurationinaSUPERminiSOT-26surfacemountpackage,anddesignedforhighvoltageswitchingapplications.Thisdevicecanbeconfiguredasa900 | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | ||
METALGATERFSILICONFET GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET 10W–28V–1GHzPUSH–PULL FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?VERYLOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–10dBMINIMUM APPLICATIONS ?HF/VHF/UHFCOMMUNICATIONSfromDCto2 | SEME-LAB Seme LAB | SEME-LAB | ||
Low-VoltageDualSPSTAnalogSwitch features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Low-VoltageDualSPSTAnalogSwitch DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Low-VoltageDualSPSTAnalogSwitch features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)?1V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ComplementaryPairMOSFET ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?LoadSwitch Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGate | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance:RDS(on)=550(max)m?@VGS=4.5V | DIODES Diodes Incorporated | DIODES |
詳細(xì)參數(shù)
- 型號(hào):
CMXD2004SR
- 制造商:
CENTRAL
- 制造商全稱:
Central Semiconductor Corp
- 功能描述:
SURFACE MOUNT SUPERmini DUAL, IN-SERIES HIGH VOLTAGE SWITCHING DIODES
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Central |
23+ |
SOT-26 |
63000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
CENTRAL |
23+ |
12000 |
詢價(jià) | ||||
Centralsemi |
19+ |
SOT-26 |
200000 |
詢價(jià) | |||
Centralsemi |
20+ |
SOT-26 |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
Centralsemi |
2023+ |
SOT-26 |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
Centralse |
2020+ |
SOT-26 |
18800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
CENTRAL |
22+ |
SOT-26 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
Centralse |
24+ |
SOT-26 |
46000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
CENTRALSEMI |
22+ |
SOT-26 |
354000 |
詢價(jià) | |||
CENTRALSEMI |
2019+PB |
SOT-26 |
46000 |
大量庫(kù)存-特價(jià) |
詢價(jià) |
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