零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
dome-shapedclearlens | VCC Visual Communications Company | VCC | ||
SCHEMATICQUICKDATSDEMOSYSTEM | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
18BITDATAACQUISITIONSYSTEM | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
InfotainmentApplicationsProcessor | TI1Texas Instruments 德州儀器 | TI1 | ||
AutomotiveApplicationsProcessorsTechnicalBrief | TI1Texas Instruments 德州儀器 | TI1 | ||
POWERDIVIDERS0?:2-WAY | SYNERGY Synergy Microwave Corporation | SYNERGY | ||
PNPSiliconPowerSwitchingTransistor Features ●2Wpowerdissipation. ●6Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto6Amps. ●ExtremelylowsaturationvoltageE.g.16mvTyp. ●Extremelylowequivalenton-resistance.RCE(sat)96mΩat2.5A. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR Features ?BVCEO=-20V ?IC=-2.5AContinuousCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *2WPOWERDISSIPATION *6APeakPulseCurrent *ExcellentHFECharacteristicsupto6Amps *ExtremelyLowSaturationVoltageE.g.16mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)96m?at2.5A | Zetex Zetex Semiconductors | Zetex | ||
SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR Features ?BVCEO=-20V ?IC=-2.5AContinuousCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SILICONPOWER(SWITCHING)TRANSISTORS FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | Zetex Zetex Semiconductors | Zetex | ||
SwitchingTransistor Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features ?BVCEO>-12V ?IC=-2.5AContinuousCollectorCurrent ?ICM=-10APeakPulseCurrent ?LowSaturationVoltageE.g.-17mVMax@IC=-100mA. ?RCE(sat)=72m?at2.5Aforalowequivalenton-resistance ?625mWpowerdissipation ?hFEcharacterisedupto-10Aforhighcurrentgai | DIODES Diodes Incorporated | DIODES | ||
PNPSiliconPlanarHighPerformanceTransistor Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?ExtremelyLowSaturationVoltage ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Marking:718 | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPTransistor Features ●ForSwitchingandAmplifierApplications. ●ExtremelyLowSaturationVoltage ●ComplementarytoNPNType:FMMT618 | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司 | PJSEMI | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODES Diodes Incorporated | DIODES |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CMD |
23+ |
SSOP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
CMD |
2023+ |
SSOP |
80000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | ||
CMD |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CMD |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
BGA |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
SAMSUNG |
23+ |
BGA |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
20+ |
BGA |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
21+ |
BGA |
35200 |
一級代理/放心采購 |
詢價(jià) | ||
SAMSUNG/三星 |
2022+ |
29 |
全新原裝 貨期兩周 |
詢價(jià) | |||
SAMSUNG/三星 |
2021+ |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) |
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