零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
COAXIALAMPLIFIEDNOISESOURCE | MICRONETICS Micronetics, Inc. | MICRONETICS | ||
N-andP-Channel30V(D-S)1MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET 100%Rg?andUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?MotorDrive ?MobilePowerBank | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
OUTLINE,IT90,IMPEDANCETRANSFORMING | IPP Innovative Power Products, Inc. | IPP | ||
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
EVALUATIONKIT INTRODUCINGLX1710/1711AUDIOMAX ThankyouforyourinterestinthelatestgenerationofAudioMAXproducts.TheenclosedLXE1710evaluationboardisafullyfunctionalmonoamplifierdesignedtodemonstratethe“newandimproved”SwitchingClass-DPowerAmplifierICfromLinfinityMicrosemi.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
DualNPChannelMOSFET Features N-Ch: VDS(V)=25V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET DESCRIPTION TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
DualNPChannelMOSFET Features N-Ch: VDS(V)=25V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
N-andP-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
FanlessIndustrialPCwithDualFanlessIndustrialPCwithDual | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
MicrocontrollerFamilyReferenceManual | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
TechnicalreferenceACServoMotor&Driver | PANASONICBATTERYPanasonic Battery Group 松下電器松下電器(中國)有限公司 | PANASONICBATTERY | ||
TechnicalreferenceACServoMotor&Driver | PANASONICBATTERYPanasonic Battery Group 松下電器松下電器(中國)有限公司 | PANASONICBATTERY |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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C-MEDIA |
23+ |
LQFP80 |
6500 |
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6500 |
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1822+ |
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9852 |
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21+ |
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23+ |
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3000 |
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