CLF1G0035S-100P分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

CLF1G0035S-100P屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的CLF1G0035S-100P晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband

GaN HEMTs usable from DC to 3.5 GHz.

Features and benefits

? Frequency of operation is from DC to 3.5 GHz

? 100 W general purpose broadband RF Power GaN HEMT

? Excellent ruggedness (VSWR = 10 : 1)

? High voltage operation (50 V)

? Thermally enhanced package

Applications

? Commercial wireless infrastructure

(cellular, WiMAX)

? Industrial, scientific, medical

? Radar ? Jammers

? Broadband general purpose amplifier ? EMC testing

? Public mobile radios ? Defense application