首頁 >CJU04N60IC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
POWERMOSFET | CHAMPChampion Microelectronic Corp. 虹冠虹冠電子工業(yè)股份有限公司 | CHAMP | ||
POWERMOSFET | CHAMPChampion Microelectronic Corp. 虹冠虹冠電子工業(yè)股份有限公司 | CHAMP | ||
POWERMOSFET | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)2.4Ω ID4A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)2.4Ω ID4A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)3.3Ω ID4A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
LowLossIGBT:IGBTinTRENCHSTOP??technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBTinTRENCHSTOPtechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RC-DriveandRC-DriveFast | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
CJ/長電 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CJ/長電 |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
CJ |
2020+ |
TO-252 |
350000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
長電 |
22+23+ |
TO-252 |
24256 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
長電 |
24+ |
TO-252 |
14940 |
全新原裝正品現(xiàn)貨/長期大量供貨!! |
詢價 | ||
CJ/長電 |
22+ |
TO-252 |
3891 |
原裝正品現(xiàn)貨,可開13點稅 |
詢價 | ||
CJ/長電 |
21+ |
TO-252 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅發(fā)票 |
詢價 | ||
CJ/長電 |
TO-252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
CJ/長電 |
23+ |
TO-252 |
6000 |
原裝正品,支持實單 |
詢價 | ||
CJ/長電 |
22+ |
TO-252 |
15240 |
原裝正品 |
詢價 |
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