CGHV35400F

400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description Cree’sCGHV35400Fisagalliumnitride(GaN)highelectron mobilitytransistor(HEMT)designedspecificallywithhigh efficiency,highgainandwidebandwidthcapabilities,which makestheCGHV35400Fidealfor2.9-3.5GHzS-Bandradar amplifierapplications.Thetransistorismat

CGHV35400F

400 W, 2900 - 3500 MHz, 50-Ohm Input

CGHV35400F1

400 W, 2.9 - 3.5 GHz, GaN HEMT

Description Wolfspeed’sCGHV35400F1isagalliumnitride(GaN)highelectronmobility transistor(HEMT)designedspecificallywithhighefficiencyandhighgainfor the2.9-3.5GHzS-Bandradarband.Thedevicehasbeendevelopedwithlong pulsecapabilitytomeetthedevelopingtrendsinra

CGHV35400F-AMP

400 W, 2900 - 3500 MHz, 50-Ohm Input

CGHV35400F-TB

400 W, 2900 - 3500 MHz, 50-Ohm Input

CGHV35400F1

Package：440226；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：400W 50V GAN HEMT, 2.9-3.5GHZ

CGHV35400F-TB

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：TEST FIXTURE FOR CGHV35400F

PE35400

UltraCMOSDivide-by-4Prescaler,3??3.5GHz

PE35400A-G

UltraCMOSDivide-by-4Prescaler,3??3.5GHz