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CEU630N

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU630N

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU630N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 200V,7.5A,RDS(ON)=0.36W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEUF630

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●200V,9A,RDS(ON)=400mΩ@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM630PAPT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOchenmko

力勤股份有限公司

CL630-CRM

3rd/2ndGenIntel?Xeon?/Intel?CoreTMATX

GSR

GSR Technology Ltd

COM630-B

COMExpressCarrierBoard

DFIDFI Inc

友通資訊友通資訊股份有限公司

CP630

PowerTransistorsPNP-SiliconDarlingtonTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize80x80MILS DieThickness8.0MILS BaseBondingPadArea18x27MILS EmitterBondingPadArea34x34MILS TopSideMetalizationAl-30,000? BackSideMetalizationTi/Pd/Ag-20,000?

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CS630

PhaseControlThyristor

ITRMS=1400A ITAVM=630A VRRM=1200-1600 Features ●Thyristorforlinefrequency ●Internationalstandardpackage ●Long-termstabilityofblockingvoltages ●Gateandauxiliarycathodepinconnection ●Amplifyinggate TypicalApplications ●DCMotorcontro

IXYS

IXYS Corporation

D630

9A200VN-channelEnhancementModePowerMOSFET

1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

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更多CET630供應(yīng)商 更新時(shí)間2025-1-20 10:32:00