零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CEP75N06 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
CEP75N06 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,75A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,75A,RDS(ON)=13mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelPowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司 | FOSTER | ||
60V/75AN-ChannelPowerMOSFET | FS First Silicon Co., Ltd | FS | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET75AMPERES60VOLTS N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET75AMPERES60VOLTS N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel60-V(D-S)MOSFET FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization: | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET75AMPERESRDS(on)=10.0mOHM60VOLTS HDTMOSE-FETHighDensityPowerFET N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.De | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOSFET75Amps,60Volts,N?ChannelTO?220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?TheseDevicesarePb?FreeandareRoHSCompliant ?NTBVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeR | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
詳細(xì)參數(shù)
- 型號:
CEP75N06
- 制造商:
CET
- 制造商全稱:
Chino-Excel Technology
- 功能描述:
N-Channel Enhancement Mode Field Effect Transistor CET,MOSFET,60A,75V,TO-220
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ROHM |
23+ |
TO220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
CET/華瑞 |
19+ |
TO-220 |
67768 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
CET |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
CET(華瑞) |
2112+ |
TO-220(TO-220-3) |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
CET |
21+ |
TO-220 |
962 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
CET/華瑞 |
23+ |
TO-220 |
22500 |
公司只做原裝正品 |
詢價 | ||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CET/華瑞 |
2022+ |
TO-220 |
2000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
CET/華瑞 |
2048+ |
TO-220 |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
CET |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 |
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相關(guān)庫存
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- CER
- CER ENG KIT 04
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