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CEP02N6A

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP02N6A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU02N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●600V,1.9A,RDS(ON)=5?@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.3A,RDS(ON)=8?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU02N6A

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

CEU02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU02N6G

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

詳細參數(shù)

  • 型號：

    CEP02N6A

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
CET
19+
TO-220
30000
詢價
CET
23+
TO220/3
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
CET
24+
TO2203
152
詢價
CET
24+
TO-220
4652
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
CET
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CET/華瑞
2022+
TO-220
32500
原廠代理 終端免費提供樣品
 詢價
CET/華瑞
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
CET/華瑞
23+
TO-220
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
C
23+
TO-220
6000
原裝正品，支持實單
 詢價
更多CEP02N6A供應商 更新時間2025-3-6 15:08:00

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