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CEB830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED830A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM830

8USB2.0ports

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

CEP830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP830G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CEB830G

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-263
360000
交期準(zhǔn)時服務(wù)周到
 詢價
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價
CET
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
CET
23+
TO263
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
CET
24+
TO263
571
詢價
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價
SOT263
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
CET
TO-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
2023+
TO263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多CEB830G供應(yīng)商 更新時間2025-1-25 8:30:00

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