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CEB8030

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB8030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP8030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM8030LANPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT75Ampere FEATURE ???????*Smallflatpackage.(D2PAK) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CZ8030

RFAMPLIFIER

SPECTRUM

Spectrum Instrumentation GmbH

CZ8030

RFAMPLIFIER

APITECH

API Technologies Corp

DEM8030C

8.3x8.3mmMax.square,3.0,4.0,and4.5mmMax.height.

Toko

TOKO, Inc

EG8030

SPWMinverterspecificchip

EGMICROJingjing Microelectronics Co., Ltd

屹晶微電子屹晶微電子有限公司

EPF8030G

HighSpeedLANInterfaceModuleforQSI6611/6612

PCA

PCA ELECTRONICS INC.

FDB8030L

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogiclevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features ?80A,30V.RDS(ON)=0.0035?@VGS=10VRDS(ON)=0.0045?@VGS=4.5V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB8030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDMC8030

DualN-ChannelPowerTrench?MOSFET40V,12A,10m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP8030L

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogiclevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features ?80A,30V.RDS(ON)=0.0035?@VGS=10VRDS(ON)=0.0045?@VGS=4.5V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP8030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FST8030

80AmpRectifier20to45VoltsSchottkyBarrier

Features ?Metalofsiliconrectifier,majontycarrierconducton ?Guardringfortransientprotection ?Lowpowerlosshighefficiency ?Highsurgecapacity,Highcurrentcapability

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

FYA-R8030ZX

LEDBARGRAPHDISPLAY

FORYARDNingbo Foryard Optoelectronics Co., Ltd.

復(fù)洋寧波復(fù)洋光電有限公司

GSTU8030

NPN300,350,400V8AMPSWITCHING

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IDTUS8030

LOWPOWERDUALSPDTHI-SPEEDUSB2.0(480MBPS)SWITCH

IDT

Integrated Device Technology, Inc.

IDTUS8030

LOWPOWERDUALSPDTHI-SPEEDUSB2.0(480MBPS)SWITCH

Features ?LowOncapacitance,3.7pF(typical) ?LowOnresistance,6.5Ω(typical) ?Lowpowerconsumption(1μAmaximum) –10μAmaximumICCToveranexpandedcontrol voltagerange(VIN=2.6V,VCC=4.3V) ?Wide-3dBbandwidth,>850MHz ?Bi-directionaloperation ?8kVESDprotection ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISCF8030

SiCN-ChannelMOSFET

FEATURES ·HighblockingvoltagewithlowOn-Resistance ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    CEB8030

  • 制造商:

    CET

  • 制造商全稱:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Logic Level Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
詢價
CET/華瑞
23+
TO-263
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
CET/華瑞
2020+
SOT263
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
CET
TO-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
詢價
JINGDAO/晶導(dǎo)微
23+
SOD-123
69820
終端可以免費供樣,支持BOM配單!
詢價
CET/華瑞
22+
TO-263
20000
保證原裝正品,假一陪十
詢價
CET
21+
TO-263
60
原裝現(xiàn)貨假一賠十
詢價
C
23+
TO-263
10000
公司只做原裝正品
詢價
C
22+
TO-263
6000
十年配單,只做原裝
詢價
CET
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
更多CEB8030供應(yīng)商 更新時間2024-10-27 15:00:00