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CEB02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED02N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●600V,1.9A,RDS(ON)=5?@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.3A,RDS(ON)=8?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEE02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEE02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1.3A,RDS(ON)=8.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEE02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEB02N6G

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
CET/華瑞
22+
TO-263
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
CET/華瑞
23+
TO-263
79999
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
C
23+
T0-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
CET/華瑞
23+
TO-263
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
CET
18+
TO-263
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
CET
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
更多CEB02N6G供應(yīng)商 更新時(shí)間2025-1-29 14:30:00

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