Technical Features

? High Power Density Footprint

? High Junction Temperature (175 °C) Operation

? Low-Inductance (6.7 nH) Design

? Implements Wolfspeed’s Third Generation SiC MOSFET

Technology

? Silicon Nitride Insulator and Copper Baseplate

? 1700 V Drain-Source Voltage

? Cross-pin Gate-Source Signal Pinout

Applications

? Energy

? Medical

? Motor & Motion Control

? Test and Production Equipment

? Transportation

? Traction Inverters

1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module

VDS 1700 V

I

DS 320 A

System Benefits

? Terminal layout allows for direct bus bar connection without bends

or bushings enabling a simple, low-inductance design.

? Isolated, integrated temperature sensing enables high-level temperature protection.

? Dedicated high-side Kelvin-drain pin enables direct voltage sensing

for gate driver overcurrent protection.

? 1700 VDS allows use with higher bus voltage (typically up to 1.4 kV).