C1825C225J5RAC

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

C1825C225J5RAC

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

C1825C225J5RAC

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

C1825C225J5RAC

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

C1825C225J5RAC

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

C1825C225J5RAC

RF Power Field Effect Transistor

C1825C225J5RAC

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

C1825C225J5RAC

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

C1825C225J5RAC

RF Power Field Effect Transistors

C1825C225J5RAC

RF Power Field Effect Transistor