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BUZ350

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BUZ350

SIPMOS Power Transistor

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BUZ350

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

C350

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350

MILITARYSPECIFCATIONSONBACK

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED Multilayerceramiccapacitorsareavailableinavarietyofphysicalsizesandconfigurations,includingleadeddevicesandsurfacemountedchips.Leadedstylesincludemoldedandconformallycoatedpartswithaxialandradialleads.However

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

AluminumElectrolyticCapacitors

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

MAGNETICSFORRF,POWER,FILTERANDDATAAPPLICATIONS

COILCRAFTCoilcraft lnc.

線(xiàn)藝美國(guó)線(xiàn)藝公司

C350E

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350M

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350N

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350N

PhaseControlSCR115AmperesAverage1600Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350P

PhaseControlSCR115AmperesAverage1600Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350P

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350PA

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350PB

PhaseControlSCR115AmperesAverage1600Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350PB

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

詳細(xì)參數(shù)

  • 型號(hào):

    BUZ350

  • 制造商:

    INFINEON

  • 制造商全稱(chēng):

    Infineon Technologies AG

  • 功能描述:

    SIPMOS Power Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
17+
P-TO218-3-1
31518
原裝正品 可含稅交易
詢(xún)價(jià)
INFINEON/英飛凌
24+
TO 3P
160283
明嘉萊只做原裝正品現(xiàn)貨
詢(xún)價(jià)
INF
24+
1
詢(xún)價(jià)
SIEM
1996
230
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢(xún)價(jià)
XI.M.Z
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢(xún)價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
詢(xún)價(jià)
INFINEON
23+
355
詢(xún)價(jià)
SIEM
24+
35200
一級(jí)代理/放心采購(gòu)
詢(xún)價(jià)
PHILIPS/飛利浦
23+
TO-3P
10000
公司只做原裝正品
詢(xún)價(jià)
INFINEON/英飛凌
23+
TO-218
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
更多BUZ350供應(yīng)商 更新時(shí)間2025-1-17 10:00:00