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BUP314D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

?Lowforwardvoltagedrop ?Highswitchingspeed ?Lowtailcurrent ?Latch-upfree ?Includingfastfree-wheeldiode

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUP314S

IGBT(HighswitchingspeedVerylowswitchinglossesLowtailcurrentLatch-upfreeAvalancherated)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

CHDTC314TKPT

NPNDigitalSiliconTransistor

VOLTAGE30VoltsCURRENT600mAmpere FEATURE *Smallsurfacemountingtype.(SOT-23) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation(VCE(sat)=40mV atIC/IB=50mA/2.5mA). *HighCollectorcurrent(IC(Max.)=600mA). *InternalisolatedNPNtrans

CHENMKOchenmko

力勤股份有限公司

CHDTC314TUPT

NPNDigitalSiliconTransistor

VOLTAGE30VoltsCURRENT600mAmpere FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation(VCE(sat)=40mV atIC/IB=50mA/2.5mA). *HighCollectorcurrent(IC(Max.)=600mA). *InternalisolatedNP

CHENMKOchenmko

力勤股份有限公司

CL314

SILICONTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

CL314

WhitetranslucenthighimpactUVstabilizedacryliclens

LUMINIS

Lumins Inc.

CMD314

DC-10GHzDistributedDriverAmplifier

QORVO

Qorvo, Inc

CMD314

DC-10GHzDistributedDriverAmplifier

QORVO

Qorvo, Inc

CP314

SmallSignalTransistorNPN-HighCurrentTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness9.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000? BackSideMetalizationAu-18,000?

CentralCentral Semiconductor Corp

美國中央半導體

CP314V

NPN-HighCurrentTransistorChip

PROCESSCP314V SmallSignalTransistor NPN-HighCurrentTransistorChip

CentralCentral Semiconductor Corp

美國中央半導體

詳細參數(shù)

  • 型號:

    BUP314D

  • 功能描述:

    IGBT 晶體管 LOW LOSS DuoPack 1200V 25A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
標準封裝
7053
原廠渠道供應,大量現(xiàn)貨,原型號開票。
詢價
INF
24+
220
詢價
SIE原碼
23+
TO-218
2000
全新原裝
詢價
INF
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價
INF
2020+
TO-3P
999999
100%進口原裝正品公司現(xiàn)貨庫存
詢價
infineon
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢
詢價
INFINEO
23+
TO-247
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
INFINEO
21+
TO-247
12588
原裝正品,自己庫存 假一罰十
詢價
23+
TO-3P
1
詢價
2023+
TO220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多BUP314D供應商 更新時間2025-2-26 16:12:00