Description

The device is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is expressly designed for a new

solution to be used in compact fluorescent lamps,

where it is coupled with the BULT3N4, its

complementary NPN transistor.

Features

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Application

■ Electronic ballast for fluorescent lighting

BULT3P3屬于分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個。意法半導體（ST）集團制造生產(chǎn)的BULT3P3晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應用中用于構建模擬信號放大功能。作為大批量生產(chǎn)的第一批半導體器件之一，對于涉及高頻開關和在大電流或高電壓下工作的應用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構建模擬信號的應用而言，它們?nèi)匀皇鞘走x技術。