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首頁 >BUL740>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEB740A	文件：502.71 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB740A	文件：87.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB740A	文件：640.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB740G	文件：418.61 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB740G	文件：795.11 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB740N	文件：400.95 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON) Highpowerandcurrenthandingcapability Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED740A	文件：421.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED740A	文件：641.89 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 400V,9A,RDS(ON)=0.55W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF740A	文件：496.23 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF740A	文件：87.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF740A	文件：640.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF740G	文件：418.61 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF740G	文件：795.11 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF740N	文件：400.95 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON) Highpowerandcurrenthandingcapability Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEI740A	文件：87.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP740A	文件：502.71 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP740A	文件：87.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP740A	文件：640.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP740G	文件：418.61 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP740G	文件：795.11 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市星佑電子有限公司	BUL740	ST	22+	TO-220	16900	支持樣品原裝現(xiàn)貨提供技術(shù)支持!	詢價
深圳市創(chuàng)新跡電子有限公司	BUL740	STM	2023+	16+	8700	原裝現(xiàn)貨	詢價
深圳市勤思達(dá)科技有限公司	BUL741	STCHN	1215+	TO-220	150000	全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).	詢價
深圳市一線半導(dǎo)體有限公司	BUL741	ST	24+	TO-220-3	1988		詢價
深圳市科恒偉業(yè)電子有限公司	BUL741	ST	2016+	TO-220	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價
深圳市凌旭科技有限公司	BUL741	ST	2016+	TO-220	6000	公司只做原裝,假一罰十,可開17%增值稅發(fā)票!	詢價
深圳市博浩通科技有限公司	BUL741	STMicro.	23+	TO-220	7750	全新原裝優(yōu)勢	詢價
深圳市豪邁興電子有限公司	BUL741	STM	2339+	N/A	21322	公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!	詢價
深圳兆威電子有限公司	BUL741	ST	22+	TO-220	157354	原裝正品現(xiàn)貨,可開13個點稅	詢價
深圳市納艾斯科技有限公司	BUL741	ST	2020+	TO220	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價

更多BUL740供應(yīng)商更新時間2025-1-8 9:01:00

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