零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BRUS740 | ULTRA-FAST RECOVERY Approximately 25 AMPERES SINGLE-PHASE, FULL-WAVE BRIDGES | edi Electronic devices inc. | edi | |
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON) Highpowerandcurrenthandingcapability Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 400V,9A,RDS(ON)=0.55W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
詳細(xì)參數(shù)
- 型號(hào):
BRUS740
- 制造商:
EDI
- 制造商全稱:
Electronic devices inc.
- 功能描述:
ULTRA-FAST RECOVERY Approximately 25 AMPERES SINGLE-PHASE, FULL-WAVE BRIDGES
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
EDI |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
AFE |
23+ |
DIP |
12560 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
BB |
23+ |
SOP |
8931 |
詢價(jià) | |||
BB |
6000 |
面議 |
19 |
SOP |
詢價(jià) | ||
BB |
23+ |
SOP |
5000 |
詢價(jià) | |||
BB |
22+ |
SOP |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
STM |
24+ |
158 |
詢價(jià) | ||||
24+ |
N/A |
52000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
EATON(伊頓) |
23+ |
6000 |
誠信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | |||
BARUN |
DRYPACK |
56520 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) |
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