TheBR34L02FV-W is a2kbit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is a memoryIC that reads ID in order for the Plug & Play feature to operate.

Features

1) 256k registers ×8 bits serial architecture

2) Single power supply(1.8V to 5.5V)

3) Two wire serial interface

4) Page Write Function (16byte)

5) Write Protect Mode

Write protect 1 (One time Rom) : 00h to 7Fh

Write protect 2 (Hard wire WP PIN) : 00h to FFh

6) Low Power consumption

Write (5V) : 1.2mA(Typ.)

Read (5V) : 0.2mA(Typ.)

Standby(5V) : 0.1μA (Typ.)

7)DATA security

Write protect feature (WP pin)

Inhibit to WRITE at low VCC

8) Small package - - - - - - SSOP-B8 pin

9) High reliability fine pattern CMOS technology

10) Endurance : 1,000,000 erase/write cycles

11) Dataretention : 40years

12) Filtered inputs in SCL?SDA for noise suppression

13) Initial data FFh in all address

BR34L02FV-W屬于集成電路（IC） > 存儲器。羅姆半導(dǎo)體集團制造生產(chǎn)的BR34L02FV-W存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。