首頁(yè) >BPT-BP2331>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
BPT-BP2331 | SILICON PHOTO TRANSISTOR APPLICATIONS ●RemoteControl,●PhotoDetector,●SmokeDetector,●AutomaticControlSystem●OpticalEncoder ABSOLUTEMAXIMUMRATINGS(Ta=25) ●Collector-to-EmitterSaturationVoltageVce(SAT).(Ib=100uA)/Ic=2mA.........0.4V(Max.) ●Emitter-to-collectorBreakdownVoltage(BVeco)...... | YSTONEYellow Stone Corp 早安股份早安股份有限公司 | YSTONE | |
BPT-BP2331 | LED | BRIGHTBRIGHT LED ELECTRONICS CORP 步來(lái)特電器寧波步來(lái)特電器有限公司 | BRIGHT | |
SiliconPowerTransistors DESCRIPTION ?WithTO-220package ?Complementtotype2SA1008 ?Lowcollectorsaturationvoltage ?Fastswitchingspeed APPLICATIONS ?Switchingregulators ?DC/DCconverters ?Highfrequencypoweramplifiers | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
NPNLOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING) LOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING ?ComplementtoKSA931 ?HighCollector-BaseVoltageVcso=80V ?CollectorCurrentIc=700mA ?CollectorDisslpationPc=1W | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -20V,-5.5A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-20V,-4.2A,RDS(ON)=48mΩ@VGS=-4.5V. RDS(ON)=60mΩ@VGS=-2.5V. RDS(ON)=78mΩ@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-Channel30V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -20V,-4.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired. RDS(ON)=78mW@VGS=-1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
詳細(xì)參數(shù)
- 型號(hào):
BPT-BP2331
- 制造商:
BRIGHT
- 制造商全稱(chēng):
BRIGHT LED ELECTRONICS CORP
- 功能描述:
LED
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
BRIGHT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
BRI |
24+ |
65230 |
詢(xún)價(jià) | ||||
BRI |
23+ |
7300 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | |||
BRI |
23+ |
7300 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | |||
BRI |
24+ |
原廠封裝 |
4612 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
24+ |
N/A |
56000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
BRIGHT |
24+ |
LED |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢(xún)價(jià) | ||
原廠 |
13+ |
IC |
1 |
普通 |
詢(xún)價(jià) | ||
BRIGHTLEDELE |
113 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | ||||
BRIGHTLEDELEC |
23+ |
10000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) |
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