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CDBG840-G

SMDSchottkyBarrierDiode

ReverseVoltage:20~60Volts ForwardCurrent:8A Features: ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlame RetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenviromentalstandardsofMIL-S-19500/228 ?Lo

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CEB840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB840B

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB840G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB840G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB840L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■500V,7.5A,RDS(ON)=0.85Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,7.5A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED840B

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,7.5A,RDS(ON)=0.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
原廠
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
CarloGavazzi-Inc.
新
6
全新原裝 貨期兩周
 詢價
Carlo Gavazzi- Inc.
2022+
2
全新原裝 貨期兩周
 詢價
Carlo
22+
NA
65
加我QQ或微信咨詢更多詳細信息,
 詢價
TI/德州儀器
23+
QFN
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
SparkFun
24+
SMD
15600
印刷電路板和試驗板
 詢價
更多BOARDBFP840FESD供應(yīng)商 更新時間2025-5-4 15:00:00

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