BLS6G3135-120分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Features

■ Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage

of 32 V, an IDq of 100 mA, a tp of up to 300 μs with δ of 10 :

◆ Output power = 120 W

◆ Gain = 11 dB

◆ Efficiency = 43

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (3.1 GHz to 3.5 GHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency

range