首頁 >BLF5>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

BLF5

Axial Lead and Cartridge Fuses - Midget

Littelfuselittelfuse

力特力特公司

BLF521

UHF power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT172Dstudlessenvelope,withaceramiccap.Allleadsareisolatedfromthemountingbase. FEA

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF521

UHF power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT172Dstudlessenvelope,withaceramiccap.Allleadsareisolatedfromthemountingbase. FEA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BLF522

UHF power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina6-lead,SOT171flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange. FEATURES ?H

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF522

UHF POWER MOS TRANSISTOR

DESCRIPTION: TheASIBLF522isDesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. FEATURES: ?Designedforbroadbandoperation. ?Highpowergain ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

BLF542

UHF power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforlargesignalamplifierapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina6-lead,SOT171flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange. FEATURES ?High

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF543

UHF power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina6-lead,SOT171flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange. Thedevicesa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF544

UHF power MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOSpowertransistorencapsulatedina6-lead,SOT171Aflangepackagewithaceramiccap.Allleadsareisolatedfromtheflange. Amarkingcodeshowinggate-sourcevoltage(VGS)informationisprovidedformatchedpairapplications. FEATURES ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF544

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF544B

UHF push-pull power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOSpush-pulltransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT268balancedflangeenvelope,withtwoceramiccaps.Themountingflangeprovidesthe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF545

UHF push-pull power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOSpush-pulltransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT268balancedflangeenvelope,withtwoceramiccaps.Themountingflangeprovidesthe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF546

UHF push-pull power MOS transistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOSpush-pulltransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT268balancedflangeenvelope,withtwoceramiccaps.Themountingflangeprovidesthe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF547

UHF push-pull power MOS transistor

DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT262A2balancedflangeenvelope,withtwoceramiccaps.Themountingflangeprovi

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF548

UHF push-pull power MOS transistor

DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT262A2balancedflangepackage,withtwoceramiccaps.Themountingflangeprovid

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF571

HF / VHF power LDMOS transistor

Generaldescription A20WLDMOSRFtransistorforbroadcastapplicationsandindustrialapplicationsintheHFandVHFband. Features ■TypicalCWperformanceatfrequencyof225MHz,asupplyvoltageof50VandanIDqof50mA: ◆Averageoutputpower=20W ◆Powergain=27.5dB

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF571

HF / VHF power LDMOS transistor

Generaldescription A20WLDMOSRFtransistorforbroadcastapplicationsandindustrialapplicationsintheHFandVHFband. Features ■TypicalCWperformanceatfrequencyof225MHz,asupplyvoltageof50VandanIDqof50mA: ◆Averageoutputpower=20W ◆Powergain=27.5dB

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF571

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF571

HF / VHF power LDMOS transistor

Generaldescription A20WLDMOSRFtransistorforbroadcastapplicationsandindustrialapplicationsintheHFandVHFband. Features ?TypicalCWperformanceatfrequencyof225MHz,asupplyvoltageof50VandanIDqof50mA: ?Averageoutputpower=20W ?Powergain=27.5dB ?Efficiency

AmpleonAmpleon USA Inc.

安譜隆

BLF572XR

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF572XR(S)

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    BLF5

  • 制造商:

    LITTELFUSE

  • 制造商全稱:

    Littelfuse

  • 功能描述:

    Axial Lead and Cartridge Fuses - Midget

供應(yīng)商型號品牌批號封裝庫存備注價格
LITTELFUSE
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
NXP
256
正品原裝--自家現(xiàn)貨-實單可談
詢價
NXP
2016+
SOT171A
3000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
PHILIPS
1998
20
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
NXPSemiconductors
24+
SOT-268A
112
詢價
NXP恩智浦
13+
1483
原裝分銷
詢價
PH
16+
原廠封裝
1500
原裝現(xiàn)貨假一罰十
詢價
NXP
23+
SOT539A
7635
全新原裝優(yōu)勢
詢價
PHL
2339+
SMD
21322
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
詢價
LEM
2018+
MODULE
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價
更多BLF5供應(yīng)商 更新時間2024-12-28 9:02:00