BLA6H1011-600分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Features and benefits

■ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply

voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 :

◆ Output power = 600 W

◆ Power gain = 17 dB

◆ Efficiency = 52

■ Easy power control

■ Integrated ESD protection

■ High flexibility with respect to pulse formats

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1030 MHz to 1090 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

Applications

■ 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the

1030 MHz to 1090 MHz frequency range