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BFG540W

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG540W/X

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W/X

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W/XR

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W/XR

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG540W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG540X

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFG540-X

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

BFG540-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG540-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG540-XR

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

BFM540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFP540

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forhighestgainandlownoiseamplifier ?OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540ESD

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?ForESDprotectedhighgainlownoiseamplifier ?HighESDrobustness typicalvalue1000V(HBM) ?OutstandingGms=21.5dB@1.8GHz MinimumnoisefigureNFmin=0.9dB@1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackage withvi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540ESD

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PHILIPS
ROHS
56520
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
NXP恩智浦/PHILIPS飛利浦
24+
SOT-343SOT-323-4
6500
新進(jìn)庫(kù)存/原裝
詢價(jià)
NXP
23+
原廠封裝
12300
詢價(jià)
NXP
1225+
SOT23
3000
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
PHI
2015+
SOT343
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
NXP
2020+
SOT343
10000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
NXP
16+
NA
8800
誠(chéng)信經(jīng)營(yíng)
詢價(jià)
PHI
24+
SOT343
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
NXP(PHILIPS)
2020+
SOT343
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
NXP
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
詢價(jià)
更多BFG540SMD供應(yīng)商 更新時(shí)間2025-1-16 15:08:00