| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount6-pinSOT363(S-mini)package.Thetransistoris primarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellular phones,cordlessphones,radardetectors,pagersan | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPNSiliconRFTransistor(Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V) NPNSiliconRFTransistor Preliminarydata ?Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V OutstandingGa=20dB NoiseFigureF=0.95dB ?Foroscillatorsupto15GHz ?TransitionfrequencyfT=45GHz ?Goldmetalizationforhighreliability ?SIEGET?45-Line | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Lownoiseamplifierdesignedforlowvoltageapplications,idealfor1.2Vor1.8Vsupplyvoltage ?Commone.g.incordlessphones,satellitereceiversandoscillatorsupto22GHz ?Highgainandlownoiseathighfrequenciesduetohightransitfrequ | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TRANZYSTORYNPN [UNITRACEMI] TRANZYSTORYNPN | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor Productdescription TheBFP520Fisalownoisedevicebasedonagroundedemitter(SIEGET?)thatispartofInfineon’sestablishedfifthgenerationRFbipolartransistorfamily.ItstransitionfrequencyfTof45GHz,highgainandlownoisemakethedevicesuitableforapplicationsupto15GHz. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPN9GHzwidebandtransistor DESCRIPTION TheBFR520isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtune | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscSiliconNPNRFTransistor DESCRIPTION ·HighPowerGain ·HighCurrentGainBandwidthProduct ·LowNoiseFigure APPLICATIONS ·DesignedforRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordless. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNRFTransistor DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforRFfrontendinwidebandapplicationsintheGHzrange.suchasanaloganddigitalcellulartelephones,cordless. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT416(SC75)envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransit | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfre | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飛利浦 |
23+ |
SOT343 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
PHILIPS/飛利浦 |
23+ |
SOD-323 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
PHILIPS/飛利浦 |
2022 |
SOD-323 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
PHI |
24+ |
SOT-143 |
12000 |
詢價 | |||
Philips |
24+ |
SOT-343 |
3600 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||
NXP |
23+ |
SOT-143 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
NXP |
16+ |
NA |
8800 |
誠信經(jīng)營 |
詢價 | ||
NXP |
23+ |
SOT143 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
nxp |
23+ |
NA |
33486 |
專做原裝正品,假一罰百! |
詢價 | ||
PHILIPS |
21+ |
SOT-143 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 |
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