| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BF591 | NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaTO-202;SOT128Bplasticpackage. FEATURES ?Lowcurrent(max.150mA) ?Highvoltage(max.210V). APPLICATIONS ?Telephonesystems. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
NPN7GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplastic,4-pinSOT223package. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrange | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN7GHzwidebandtransistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN7GHzwidebandtransistor DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrangesuchasMATV orCATVamplifiersandR | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
iscSiliconNPNRFTransistor DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNRFTransistor DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
NPN7GHzwidebandtransistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
250WATTS(AC)DC/DCSINGLEOUTPUT 250WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux21(24)TEx166.5mm(24TEfor5Voutputs) ?Weight1.7kg | POWERBOX Powerbox manufactures | POWERBOX | ||
LEDForFlashLightSource LEDForFlashLightSource ●Highoutputtypewithreflectorequipped. | CITIZENCitizen Electronics Co., Ltd 西鐵城電子株式會(huì)社 | CITIZEN | ||
PNPLowVCE(Sat)1.0Amptransistor DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT591EisaPNPLowVCE(SAT)1.0Amptransistor,epoxymoldedinaspacesavingSOT-563surfacemountpackageanddesignedforapplicationsrequiringahighcurrentcapabilityandlowsaturationvoltages. MARKINGCODE:L59 | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS PNPtransistor | CDIL Continental Device India Limited | CDIL | ||
SOT-23-PowerTransistorandDarlingtons | RECTRON Rectron Semiconductor | RECTRON | ||
PNPEPITAXIALPLANARSILICONTRANSISTOR PNPEPITAXIALPLANARSILICONTRANSISTOR ComplementaryCMMT491A | CDIL Continental Device India Limited | CDIL | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness9.0MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl- | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness7.1MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness5.9MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
TELEFON
- 封裝形式：
直插封裝
- 極限工作電壓：
210V
- 最大電流允許值：
0.15A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
BF460,BF461,BF462,BF615,BF757,BF758,BF759,
- 最大耗散功率：
1.3W
- 放大倍數(shù)：
- 圖片代號(hào)：
A-83
- vtest：
210
- htest：
999900
- atest：
0.15
- wtest：
1.3
詳細(xì)參數(shù)
- 型號(hào)：
BF591
- 制造商：
PHILIPS
- 制造商全稱：
NXP Semiconductors
- 功能描述：
NPN high-voltage transistors
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ADI(亞德諾)/LINEAR |
2112+ |
LFCSP-64 |
31500 |
250個(gè)/托盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價(jià) | ||
ADI(亞德諾)/LINEAR |
2021+ |
LFCSP-64 |
499 |
詢價(jià) | |||
ADI(亞德諾)/LINEAR |
23+ |
LFCSP-64 |
9980 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
ADI(亞德諾) |
2022 |
LFCSP-64 |
5000 |
公司現(xiàn)貨 |
詢價(jià) | ||
ADI(亞德諾) |
23+ |
LFCSP64 |
7350 |
原裝進(jìn)口,原廠直銷!當(dāng)天可交貨,支持原型號(hào)開票! |
詢價(jià) | ||
ADI(亞德諾)/LINEAR(凌特) |
23+ |
LFCSP64 |
6000 |
誠信服務(wù)，絕對(duì)原裝原盤 |
詢價(jià) | ||
24+ |
N/A |
62000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
ADI(亞德諾) |
23+ |
LFCSP-64 |
7327 |
原廠渠道,品質(zhì)保證,原裝正品現(xiàn)貨 |
詢價(jià) | ||
AD |
23+ |
QFN |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
23+ |
to-92 |
32687 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價(jià) |
