零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz F=1.3dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz F=1.3dBat900MHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconNPNRFTransistor DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz ?HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS ?Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
LowNoiseFigure DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz ?HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS ?Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz F=1.3dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?HightransitionfrequencyfT=8GHz ?Excellentlargesignalbehaviour ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?HightransitionfrequencyfT=8GHz ?Excellentlargesignalbehaviour ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?HightransitionfrequencyfT=8GHz ?Excellentlargesignalbehaviour ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz F=1.3dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor* ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,F=1dBat900MHz ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdescription | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersupto2GHzForlinearbroadbandamplifiers) NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=7.5GHz F=1.3dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
表面帖裝型 (SMD)_超高頻/特高頻 (UHF)_寬頻帶
- 封裝形式:
貼片封裝
- 極限工作電壓:
15V
- 最大電流允許值:
0.035A
- 最大工作頻率:
5MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
- 最大耗散功率:
- 放大倍數(shù):
- 圖片代號(hào):
H-15
- vtest:
15
- htest:
5000000
- atest:
0.035
- wtest:
0
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MOT/PHI |
16+ |
CAN4 |
8500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
MOT/PHI |
專業(yè)鐵帽 |
CAN4 |
8500 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價(jià) | ||
MOT/PHI |
專業(yè)鐵帽 |
CAN4 |
67500 |
鐵帽原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
VISHAY |
2023+ |
SOT143 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
KVG QUARTZ CRYSTAL TECHNOLOGY |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
KVG QUARTZ CRYSTAL TECHNOLOGY |
22+ |
N/A |
11485 |
原裝原裝原裝 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-39 |
1009499 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋齑?詳 |
詢價(jià) | ||
93 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||||
24+ |
35200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||||
PHILIPS |
2023+ |
TO |
8700 |
原裝現(xiàn)貨 |
詢價(jià) |