| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BDV64 | POWER TRANSISTORS(12A,125W)
| MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | |
BDV64 | PNP SILICON POWER DARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDV65,BDV65A,BDV65BandBDV65C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A | POINN Power Innovations Ltd | POINN | |
BDV64 | PNP SILICON POWER DARLINGTONS PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C ?125Wat25°CCaseTemperature ?12AContinuousCollectorCurrent ?MinimumhFEof1000at4V,5A | TRSYS Transys Electronics | TRSYS | |
BDV64 | Silicon PNP Power Transistors DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBDV65/65A/65B/65C ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Foruseingeneralpurposeamplifierapplications. | SAVANTIC Savantic, Inc. | SAVANTIC | |
BDV64 | isc Silicon PNP Darlington Power Transistor DESCRIPTION ·CollectorCurrent-IC=-12A ·Collector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A ·ComplementtoTypeBDV65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
BDV64 | PNP SILICON DARLINGTONS POWER TRANSISTORS PNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV65-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | |
BDV64 | Silicon PNP Darlington Power Transistor DESCRIPTION ?CollectorCurrent-lc=-12A ?Collector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max.)@lc=-5A ?ComplementtoTypeBDV65/A/B/C APPLICATIONS ?Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
BDV64 | PNP SILICON POWER DARLINGTONS | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BDV64 | Silicon PNP Power Transistors | SAVANTIC Savantic, Inc. | SAVANTIC | |
BDV64 | PNP SILICON POWER DARLINGTONS | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BDV64 | 包裝：散裝 封裝/外殼：TO-218-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 60V 12A TO218 | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | |
POWER TRANSISTORS(12A,125W)
| MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
PNP SILICON POWER DARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDV65,BDV65A,BDV65BandBDV65C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A | POINN Power Innovations Ltd | POINN | ||
PNP SILICON POWER DARLINGTONS PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C ?125Wat25°CCaseTemperature ?12AContinuousCollectorCurrent ?MinimumhFEof1000at4V,5A | TRSYS Transys Electronics | TRSYS | ||
Silicon PNP Power Transistors DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBDV65/65A/65B/65C ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Foruseingeneralpurposeamplifierapplications. | SAVANTIC Savantic, Inc. | SAVANTIC | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·CollectorCurrent-IC=-12A ·Collector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A ·ComplementtoTypeBDV65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV65-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | ||
Silicon PNP Darlington Power Transistor DESCRIPTION ?CollectorCurrent-lc=-12A ?Collector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max.)@lc=-5A ?ComplementtoTypeBDV65/A/B/C APPLICATIONS ?Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWER TRANSISTORS(12A,125W)
| MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS ComplementarySiliconPlasticPowerDarlingtons ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?HFE=1000(min)@5Adc ?MonolithicConstructionwithBuilt?inBaseEmitterShuntResistors ?ThesearePb?FreeDevices* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-P+Darl+Di
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
12A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
BDV66,BDW84A,
- 最大耗散功率：
125W
- 放大倍數(shù)：
β>1000
- 圖片代號(hào)：
B-62
- vtest：
60
- htest：
999900
- atest：
12
- wtest：
125
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
BDV64
- 制造商：
Central Semiconductor Corp
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個(gè)
- 包裝：
散裝
- 晶體管類型：
PNP
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）：
1000 @ 5A，4V
- 頻率 - 躍遷：
60MHz
- 安裝類型：
通孔
- 封裝/外殼：
TO-218-3
- 供應(yīng)商器件封裝：
TO-218
- 描述：
TRANS PNP 60V 12A TO218
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3PN |
10000 |
全新 |
詢價(jià) | |||
ST |
23+ |
TO-247 |
3000 |
全新原裝 |
詢價(jià) | ||
BOURNS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
PHI/ON |
23+ |
TO-3P |
106310 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳 |
詢價(jià) | ||
pi |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
N/A |
23+ |
SMD |
5177 |
現(xiàn)貨 |
詢價(jià) | ||
23+ |
20000 |
正品原裝貨價(jià)格低qq:2987726803 |
詢價(jià) | ||||
MOSPEC |
2023+ |
TO-3P |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | ||
24+ |
N/A |
78000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Central Semiconductor Corp |
24+ |
TO-218-3 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) |
