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BDT65

SILICON DARLINGTON POWER TRANSISTORS

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BDT65

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=12A ·HighDCCurrentGain-hFE=1000(Min)@IC=5A ·ComplementtoTypeBDT64/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT64-A-B-CCompliancetoRoHS.

COMSET

Comset Semiconductor

BDT65

Silicon NPN Darlington Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BDT65A

SILICON DARLINGTON POWER TRANSISTORS

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BDT65A

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=12A ·HighDCCurrentGain-hFE=1000(Min)@IC=5A ·ComplementtoTypeBDT64/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65A

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT64-A-B-CCompliancetoRoHS.

COMSET

Comset Semiconductor

BDT65AF

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?CollectorCurrent-IC=12A ?HighDCCurrentGain-hFE=1000(Min)@IC=5A ?ComplementtoTypeBDT64F/AF/BF/CF APPLICATIONS ?Designedforaudiooutputstagesandgeneralpurpose amplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65B

SILICON DARLINGTON POWER TRANSISTORS

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ETC1List of Unclassifed Manufacturers

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BDT65B

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=12A ·HighDCCurrentGain-hFE=1000(Min)@IC=5A ·ComplementtoTypeBDT64/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65B

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT64-A-B-CCompliancetoRoHS.

COMSET

Comset Semiconductor

BDT65BF

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?CollectorCurrent-IC=12A ?HighDCCurrentGain-hFE=1000(Min)@IC=5A ?ComplementtoTypeBDT64F/AF/BF/CF APPLICATIONS ?Designedforaudiooutputstagesandgeneralpurpose amplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65C

SILICON DARLINGTON POWER TRANSISTORS

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

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BDT65C

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Cpackage ·HighDCCurrentGain ·DARLINGTON ·ComplementtotypeBDT64C APPLICATIONS ·Foraudiooutputstagesandgeneralpurposeamplifierandswitchingapplications

SAVANTIC

Savantic, Inc.

BDT65C

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=12A ·HighDCCurrentGain-hFE=1000(Min)@IC=5A ·ComplementtoTypeBDT64/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65C

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT64-A-B-CCompliancetoRoHS.

COMSET

Comset Semiconductor

BDT65CF

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?CollectorCurrent-IC=12A ?HighDCCurrentGain-hFE=1000(Min)@IC=5A ?ComplementtoTypeBDT64F/AF/BF/CF APPLICATIONS ?Designedforaudiooutputstagesandgeneralpurpose amplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65F

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?CollectorCurrent-IC=12A ?HighDCCurrentGain-hFE=1000(Min)@IC=5A ?ComplementtoTypeBDT64F/AF/BF/CF APPLICATIONS ?Designedforaudiooutputstagesandgeneralpurpose amplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BDT65A

Silicon NPN Darlington Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BDT65AF

Silicon NPN Darlington Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

晶體管資料

  • 型號:

    BDT65

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    12A

  • 最大工作頻率:

    >10MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    BDV65,BDW40,BDW93A,BDX87A,2N6057,

  • 最大耗散功率:

    125W

  • 放大倍數(shù):

    β>1000

  • 圖片代號:

    B-89

  • vtest:

    60

  • htest:

    10000100

  • atest:

    12

  • wtest:

    125

詳細參數(shù)

  • 型號:

    BDT65

  • 功能描述:

    SILICON DARLINGTON POWER TRANSISTORS

供應商型號品牌批號封裝庫存備注價格
24+
TO-220
10000
全新
詢價
ST/進口原
17+
TO-220
6200
詢價
ST
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ST
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
JINGDAO/晶導微
23+
SMC(DO-214AB)
69820
終端可以免費供樣,支持BOM配單!
詢價
DSI
2020+
NA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
DSI
2021+
NA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
ST/意法
23+
TO-220
10000
公司只做原裝正品
詢價
ST/意法
2022+
TO-220
12888
原廠代理 終端免費提供樣品
詢價
N/A
23+
SMD
5177
現(xiàn)貨
詢價
更多BDT65供應商 更新時間2025-1-16 16:00:00