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BFG310

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability Applications ?IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability Applications ?IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFU310

N-channelsiliconfield-effecttransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BGA310

SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz)

SiliconBipolarMMIC-Amplifier Preliminarydata ?Cascadable50?-gainblock ?9dBtypicalgainat1.0GHz ?9dBmtypicalP-1dBat1.0GHz ?3dB-bandwidth:DCto2.4GHz

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BPS310

BPS310Series-12mmUncompensatedLowPressureSensor

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

BR310

SINGLE-PHASESILICONBRIDGERECTIFIER

RECTRON

Rectron Semiconductor

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

BYTES

Bytes

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

BR310

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-3.0Amperes FEATURES *Surgeoverloarating:50Amperespeak *Lowforwardvoltagedrop *Smallsize:simpleinstallation

DCCOM

Dc Components

BR310

SINGLE-PHASESILICONBRIDGE

Features ●Surgeoverloadrating-50amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Tinnedcopperleads ●MountingPosition:Any ●Mounting:Thruholdfor#6screw

Good-Ark

GOOD-ARK Electronics

BR310

3.0ABRIDGERECTIFIERS

3.0ABRIDGERECTIFIERS

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

UNIOHMUniohm

臺(tái)灣厚聲

BR310

SILICONBRIDGERECTIFIERS

VOLTAGERANGE:50---1000V CURRENT:3.0A FEATURES Ratingto1000VPRV Surgeoverloadratingto50Amperespeak Idealforprintedcircuitboard Reliablelowcostconstructionutilizingmoldedplastictechniqueresultsininexpensiveproduct LeadsolderableperMIL-STD-202

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BDP310GK

  • 制造商:

    Siemens

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
PHILIPS/飛利浦
24+23+
SOT223
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
詢價(jià)
PHILIPS/飛利浦
22+
SOT223
20000
保證原裝正品,假一陪十
詢價(jià)
PHILIPS/飛利浦
23+
SOT223
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
PHILIPS/飛利浦
1535+
15050
詢價(jià)
PHILIPS/飛利浦
23+
SOT223
20000
原裝正品 歡迎咨詢
詢價(jià)
NEXPERIA/安世
23+
12000
詢價(jià)
PHILIPS/飛利浦
23+
15050
全新原裝,歡迎來電咨詢
詢價(jià)
PHILIPS
9941
1000
公司優(yōu)勢庫存 熱賣中!
詢價(jià)
NXP
12+
SOT223
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
115
212021
05+
1
原廠原裝
詢價(jià)
更多BDP310GK供應(yīng)商 更新時(shí)間2024-10-26 10:36:00