| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD807 | isc Silicon NPN Power Transistor DESCRIPTION ·DCCurrentGain-:hFE=30(Min.)@IC=2A ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) ·ComplementtoTypeBD808 APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
BD807 | Silicon NPN Power Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | |
870MHzopticalreceivers | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
870MHzopticalreceivers Generaldescription HighdynamicrangeopticalreceiveramplifiermodulesinastandardSOT115packagewherethenon-jacketedfiberhaseithernoconnectororhasanFC/APCorSC/APCconnector. Features ■Excellentlinearity ■Lownoise ■Excellentflatness ■StandardCATVoutline ■Rugged | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
N-CHANNELENHANCEMENTMODEDMOSTRANSISTOR Features ?HighBreakdownVoltage ?HighInputImpedance ?FastSwitchingSpeed ?SpeciallySuitedforTelephoneSubsets ?IdealforAutomatedSurfaceMountAssembly | DIODES Diodes Incorporated | DIODES | ||
POWERTRANSISTORS(8.0A,150-200V,60W)
| MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導體股份有限公司 | MOSPEC | ||
MEDIUMVOLTAGENPNFASTSWITCHINGDARLINGTONTRANSISTORS DESCRIPTION ThedevicesaresiliconEpitaxialPlanarNPNpowertransistorsinDarlingtonconfigurationwithintegratedbase-emitterspeed-updiode,mountedinTO-220plasticpackage. Theycanbeusedinhorizontaloutputstagesof110oCRTvideodisplays. ■STMicroelectronicsPREFERREDSALESTYP | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
FASTSWITCHINGDARLINGTONTRANSISTOR
| bocaBoca Semiconductor Corporation 博卡博卡半導體公司 | boca | ||
HighVoltage&FastSwitchingDarlingtonTransistor HighVoltage&FastSwitchingDarlingtonTransistor ?UsingInHorizontalOutputStagesof110°CrtVideoDisplays ?BUILT-INSPEED-UPDiodeBetweenBaseandEmitter | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
NPNSILICONDARLINGTONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBU806andBU807typesareNPNSiliconDarlingtonTransistorsdesignedforhighvoltage,highcurrent,fastswitchingapplications. | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
SiliconNPNDarlingtonPowerTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
NPNSILICONDARLINGTONTRANSISTORv | CentralCentral Semiconductor Corp 美國中央半導體 | Central | ||
HighVoltage:VCBO=330V(Min) | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
FASTSWITCHINGDARLINGTONTRANSISTORS DESCRIPTION TheBUB806/807andBUBO6FI/807F!aresilicon epitaxialplanarNPNpowertransistorsinDar- lingtonconfigurationwithintegratedbase-emitter speed-updiode,mountedrespectivelyinTO-220 plasticpackageandISOWATT220fullyisolated package.Theyarehighvoltage,highcurrent | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION ?HighVoltage:VCBO=330V(Min) ?LowSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=5A APPLICATIONS ?DesignedforuseinhorizontaldeflectioncircuitsinTV’sandCRT’s. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SiliconNPNDarlingtonPowerTransistor DESCRIPTION ?HighVoltage:VCBO=330V(Min) ?LowSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=5A APPLICATIONS ?DesignedforuseinhorizontaldeflectioncircuitsinTV’sandCRT’s. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
FASTSWITCHINGDARLINGTONTRANSISTORS DESCRIPTION TheBUB806/807andBUBO6FI/807F!aresilicon epitaxialplanarNPNpowertransistorsinDar- lingtonconfigurationwithintegratedbase-emitter speed-updiode,mountedrespectivelyinTO-220 plasticpackageandISOWATT220fullyisolated package.Theyarehighvoltage,highcurrent | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
70V
- 最大電流允許值：
10A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD545B,BD707,3DD164B,
- 最大耗散功率：
90W
- 放大倍數(shù)：
- 圖片代號：
B-10
- vtest：
70
- htest：
999900
- atest：
10
- wtest：
90
詳細參數(shù)
- 型號：
BD807
- 制造商：
ISC
- 制造商全稱：
Inchange Semiconductor Company Limited
- 功能描述：
isc Silicon NPN Power Transistor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
詢價 | |||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
ISC |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ON |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
N/A |
23+ |
SMD |
5177 |
現(xiàn)貨 |
詢價 | ||
ON |
23+ |
TO-220 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ON |
23+ |
TO-220 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
24+ |
N/A |
51000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
ON |
1738+ |
TO-220 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 |
