零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BD801 | Plastic High Power Silicon NPN Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseupto30Wattaudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=1.0Adc ?BD801iscomplementarywithBD798,800,802 | Motorola Motorola, Inc | Motorola | |
BD801 | EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base,SiliconN-P-NandP-N-PVERSAWATTTransistors | Intersil Intersil Corporation | Intersil | |
BD801 | isc Silicon NPN Power Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
BD801 | Silicon NPN Power Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
DiscreteSemiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | AMMSEMI | ||
LowCapacitanceandInsertionLoss | BencentShenzhen Bencent Electronics Co., Ltd. 檳城電子深圳市檳城電子股份有限公司 | Bencent | ||
BiasControlledMonolithicICVHF/UHFRFAmplifier Features ?BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. ?Highgain;PG=27dBtyp.(atf=200MHz),PG=21.5dBtyp.(atf=900MHz) ?Lownoise;NF=1.1dBtyp.(atf=200MHz),NF=1.75dBtyp.(atf=900M | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
LowCapacitanceandInsertionLoss | BencentShenzhen Bencent Electronics Co., Ltd. 檳城電子深圳市檳城電子股份有限公司 | Bencent | ||
GasDischargeTube | BencentShenzhen Bencent Electronics Co., Ltd. 檳城電子深圳市檳城電子股份有限公司 | Bencent | ||
SILICONBRIDGERECTIFIERS PRV:50-1000Volts Io:8.0Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
SILICONBRIDGERECTIFIERS REVERSEVOLTAGE-50to1000Volts FORWARDCURRENT-8.0Amperes FEATURES ●Surgeoverloadrating-200amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any | HY HY ELECTRONIC CORP. | HY | ||
SiliconBridgeRectifiers8Ampsto10Amps SiliconBridgeRectifiers8Ampsto10Amps TheplasticmaterialcarriesU/Lrecognition94V-O | EDAL Edal Industries, Inc. | EDAL | ||
SILICONBRIDGERECTIFIERS | EIC EIC discrete Semiconductors | EIC | ||
SILICONBRIDGERECTIFIERS | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
SILICONBRIDGERECTIFIERS | HY HY ELECTRONIC CORP. | HY | ||
SiliconBridgeRectifiers | HY HY ELECTRONIC CORP. | HY | ||
BridgeRectifier | FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司 | FORMOSA | ||
SILICONBRIDGERECTIFIERS | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰達半導(dǎo)體深圳辰達半導(dǎo)體有限公司 | CHENDA | ||
SILICONBRIDGERECTIFIERS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
SILICONBRIDGERECTIFIERS | EIC EIC discrete Semiconductors | EIC |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
低頻或音頻放大 (LF)_功率放大 (L)
- 封裝形式:
直插封裝
- 極限工作電壓:
100V
- 最大電流允許值:
8A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
BD543C,BD711,3DK32D,
- 最大耗散功率:
65W
- 放大倍數(shù):
- 圖片代號:
B-10
- vtest:
100
- htest:
999900
- atest:
8
- wtest:
65
詳細參數(shù)
- 型號:
BD801
- 制造商:
INTERSIL
- 制造商全稱:
Intersil Corporation
- 功能描述:
EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
詢價 | |||
Intersil |
23+ |
原廠原裝 |
1296 |
全新原裝 |
詢價 | ||
NPC |
05+ |
原廠原裝 |
231 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
ISC |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
2000 |
20 |
詢價 | |||||
ON |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
N/A |
23+ |
SMD |
5177 |
現(xiàn)貨 |
詢價 | ||
FAIRCHILD/POWER/ST |
TO-220 |
6000 |
原裝現(xiàn)貨,長期供應(yīng),終端可賬期 |
詢價 | |||
ON |
23+ |
TO-220 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |