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BD660CS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

PANJITPan Jit International Inc.

強茂股份有限公司

BD660CS_L2_00001

Package:TO-252-3,DPak(2 引線 + 接片),SC-63;包裝:散裝 類別:分立半導體產(chǎn)品 二極管 - 整流器 - 陣列 描述:SURFACE MOUNT SCHOTTKY BARRIER R

Panjit International Inc.

Panjit International Inc.

Panjit International Inc.

BD660CS_S2_00001

Package:TO-252-3,DPak(2 引線 + 接片),SC-63;包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類別:分立半導體產(chǎn)品 二極管 - 整流器 - 陣列 描述:SURFACE MOUNT SCHOTTKY BARRIER R

Panjit International Inc.

Panjit International Inc.

Panjit International Inc.

BD660CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?Forsurfacemountedapplications ?Lowprofilepackage ?Built-instrainrelief ?Lowpowerloss,Highefficiency ?Highsurgecapacity ?F

PANJITPan Jit International Inc.

強茂股份有限公司

BF660

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor ●ForVHFoscillatorapplications

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF660W

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor ?ForVHFoscillatorapplications

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFU660F

NPNwidebandsiliconRFtransistor

Generaldescription NPNsiliconmicrowavetransistorforhighspeed,lownoiseapplicationsinaplastic,4-pindual-emitterSOT343Fpackage. Featuresandbenefits ■LownoisehighlinearityRFtransistor ■Highoutputthird-orderinterceptpoint27dBmat1.8GHz ■40GHzfTsilicontechnolo

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFU660F

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFU660FWB

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BRUS660

ULTRA-FASTRECOVERY8AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISP.C.BOARDMOUNTING

edi

Electronic devices inc.

詳細參數(shù)

  • 型號:

    BD660CS

  • 制造商:

    PANJIT

  • 制造商全稱:

    Pan Jit International Inc.

  • 功能描述:

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

供應商型號品牌批號封裝庫存備注價格
PANJIT
23+
TO-252
10000
公司只做原裝正品
詢價
PANJIT/ 強茂
22+
TO-252
6000
十年配單,只做原裝
詢價
PANJIT/ 強茂
22+
TO-252
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
PANJIT
24+
TO-252
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
PANJIT
22+23+
TO-252(DP
21967
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
PANJIT/強茂
23+
TO-252(DPAK)
10000
原廠授權代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
詢價
24+
N/A
57000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
24+
TO-220
10000
全新
詢價
N/A
23+
原廠封裝
5177
現(xiàn)貨
詢價
SGS
23+
20000
正品原裝貨價格低
詢價
更多BD660CS供應商 更新時間2025-1-26 14:30:00