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首頁 >BCX55-16 T/R>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
60V,1ANPNmediumpowertransistors Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability ?AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
45V/60V/80V,1ANPNmediumpowertransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors 1.Generaldescription NPNmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits ?Highcollectorcurrentcapa | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
45V/60V/80V,1ANPNmediumpowertransistors Featuresandbenefits *HighcollectorcurrentcapabilityICand ICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors ?ForAFdriverandoutputstages ?Highcollectorcurrent ?Lowcollector-emittersaturationvoltage ?Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
NPNmediumpowertransistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES ?Highcurrent(max.1A) ?Lowvoltage(max.80V). APPLICATIONS ?Switching. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNSiliconEpitaxialPlanarTransistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconAFTransistors | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors ?ForAFdriverandoutputstages ?Highcollectorcurrent ?Lowcollector-emittersaturationvoltage ?Complementarytypes:BCP51...BCP53(PNP) ?Pb-free(RoHScompliant)package ?QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNPlastic-EncapsulateTransistors | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
1A,60VNPNSiliconMediumPowerTransistor FEATURES ?ForAFdriverandoutputstages ?Highcollectorcurrent ?Lowcollector-emittersaturationvoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
NPNSiliconMediumPowerTransistor FEATURES ?ForAFDriverandOutputStages ?HighCollectorCurrent ?LowCollector-EmitterSaturationVoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
60V,1APNPmediumpowertransistors Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
Plastic-EncapsulateTransistors FEATURES PNPComplementstoBCX51,BCX52,BCX53 LowVoltage HighCurrent APPLICATIONS DriverStagesofAudioAmplifiers | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
SOT-89-3LPlastic-EncapsulateTransistors FEATURES ?PNPComplementstoBCX51,BCX52,BCX53 ?LowVoltage ?HighCurrent APPLICATIONS ?DriverStagesofAudioAmplifiers | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ |
詳細(xì)參數(shù)
- 型號:
BCX55-16 T/R
- 功能描述:
兩極晶體管 - BJT TRANS MED PWR TAPE-7
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP |
23+ |
SOT89 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
NXP/恩智浦 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NXP |
21+ |
SOT-89 |
1000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
NEXPERIA |
1809+ |
SOT-89-3 |
6675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
PH |
22+ |
NA |
30000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Nexperia(安世) |
21+ |
SOT-89 |
663 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NXP/恩智浦 |
23+ |
SOT89 |
1000 |
詢價 | |||
Nexperia |
21+ |
SOT-89 |
9866 |
詢價 | |||
NXP(恩智浦) |
23+ |
標(biāo)準(zhǔn)封裝 |
6000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
Nexperia |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
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