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BD180

PlasticMediumPowerSiliconPNPTransistor

PlasticMediumPowerSiliconPNPTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=0.15Adc ?BD180iscomplementarywithBD179

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BD180

MediumPowerLinearandSwitchingApplications

Applications ?ComplementtoBD175/177/179respectively

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD180

PlasticMediumPowerSiliconPNPTransistor

3.0AMPERESPOWERTRANSISTORSPNPSILICON80VOLTS,30WATTS Thisdeviceisdesignedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?DCCurrentGain?hFE=40(Min)@IC=0.15Adc ?BD180iscomplementarywi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD180

SiliconPNPPowerTransistors

DESCRIPTION WithTO-126package ·ComplementtotypeBD175/177/179 APPLICATIONS ·Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD180

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD180

EPITAXIALSILICONPOWERTRANSISTORS

BD175,177,179NPNPLASTICPOWERTRANSISTORS BD176,178,180PNPPLASTICPOWERTRANSISTORS MediumPowerLinerandSwitchingApplications

CDIL

Continental Device India Limited

BD180G

PlasticMediumPowerSiliconPNPTransistor

3.0AMPERESPOWERTRANSISTORSPNPSILICON80VOLTS,30WATTS Thisdeviceisdesignedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?DCCurrentGain?hFE=40(Min)@IC=0.15Adc ?BD180iscomplementarywi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD180PNP

EPITAXIALSILICONPOWERTRANSISTORS

BD175,177,179NPNPLASTICPOWERTRANSISTORS BD176,178,180PNPPLASTICPOWERTRANSISTORS MediumPowerLinerandSwitchingApplications

CDIL

Continental Device India Limited

BF180

NPNTRANZYSTORY

[ADVANIOERLIKON] TELEVISION/VIDEODEVICES I.F./R.F.amplifiersandoscillators V.H,F./U.H.F.TVtuningdevices

ETCList of Unclassifed Manufacturers

未分類制造商

BF180

GeneralPurposeDiodes

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BF180

Electricalcharacterlitics

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BFP180

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2to2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz ?F=2.1dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP180W

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2to2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz ?F=2.1dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP180W

NPNSiliconRFTransistor

NPNSiliconRFTransistor ●Forlow-poweramplifierinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2mAto2.5mAfT=7GHz ●F=2.1dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR180

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2mAto2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR180

NPNSiliconRFTransistor

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR180W

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2mAto2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR180W

NPNSiliconRFTransistor

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA ?Hermeticallysealedmicrowavepackage ?fT=6.5GHz,F=2.6dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY180

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

晶體管資料

  • 型號：

    BC180

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    低頻或音頻放大 （LF）_TR

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    45V

  • 最大電流允許值：

    0.5A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

    BC337,BC737,BC637,3DK4B,

  • 最大耗散功率：

    0.36W

  • 放大倍數(shù)：

  • 圖片代號：

    A-20

  • vtest：

    45

  • htest：

    999900

  • atest：

    0.5

  • wtest：

    0.36

供應(yīng)商型號品牌批號封裝庫存備注價格
CHILISIN/奇力新
2022+
DIP
51000
原廠代理 終端免費(fèi)提供樣品
 詢價
CHILISIN/奇力新
23+
DIP
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
CHILISIN/奇力新
23+
DIP
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
湯姆遜
2020+
TO-92
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
JXK/杰信科
23+
TO-92
999999
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
B.B.Battery
22+
NA
80
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
FAIRCHILD
180
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
FAI
24+
8000
詢價
FAIRCHI
2020+
TO-92
4793
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
Fairchild
23+
TO-92
7750
全新原裝優(yōu)勢
 詢價
更多BC180供應(yīng)商 更新時間2025-1-6 14:01:00

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