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BB501CAS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501M

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501M

BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501MAS-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC501

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BC501S

HardToolStorageModule,S-Hook

TheBucketWorkCenterisanecosystemthatwillrevampthewayaLinemanworks.ItallowsLinemantocustomizetheirworkspace,justlikeother professionalscustomizetheirofficespace.TheKleinToolsHardToolStorageModulehasmultipleslotstoaccommodateawidevarietyofLineman tools.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BD501

iscSiliconNPNPowerTransistors

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=50V(Min) 80V(Min) ·HighPowerDissipation APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementary

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD501

SiliconNPNPowerTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD501B

iscSiliconNPNPowerTransistors

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=50V(Min) 80V(Min) ·HighPowerDissipation APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementary

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD501B

SiliconNPNPowerTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號:

    BB501CAS-TL

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    Built in Biasing Circuit MOS FET IC UHF RF Amplifier

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
24+
CMPAK-4
3000
原裝正品,假一罰十!
詢價
RENESAS/瑞薩
23+
CMPAK-4
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
RENESAS/瑞薩
2022
CMPAK-4
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
RENESAS
09+
SOF343
5460
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
RENESAS
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價
RENESAS/瑞薩
23+
NA/
3000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
RENESAS
2023+
SOF343
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
詢價
RENESAS
23+
SOF343
10000
原裝正品現(xiàn)貨
詢價
RENESAS
2023+
SOT143
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
RENESAS
24+
SOT143
9860
全新原裝現(xiàn)貨/假一罰百!
詢價
更多BB501CAS-TL供應(yīng)商 更新時間2025-1-21 15:26:00