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BB501

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501C

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501C

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501CAS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501MAS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC501

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BC501S

HardToolStorageModule,S-Hook

TheBucketWorkCenterisanecosystemthatwillrevampthewayaLinemanworks.ItallowsLinemantocustomizetheirworkspace,justlikeother professionalscustomizetheirofficespace.TheKleinToolsHardToolStorageModulehasmultipleslotstoaccommodateawidevarietyofLineman tools.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

詳細參數(shù)

  • 型號：

    BB501

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
24+
SOT-343
3600
絕對原裝!現(xiàn)貨熱賣!
 詢價
HITACHI
24+
S0T343
6000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS瑞薩/HITACHI日立
24+
SOT-143SOT-23-4
9000
新進庫存/原裝
 詢價
HITACHI
23+
SOT-143
6680
全新原裝優(yōu)勢
 詢價
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
Hitachi
22+23+
Sot-143
32742
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
HITACH
04+
SOT143
200000
詢價
HITACH
20+
SOT143
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
HITACHI
2020+
143
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
RENESAS
24+
SOT143
9860
全新原裝現(xiàn)貨/假一罰百!
 詢價
更多BB501供應(yīng)商 更新時間2025-3-6 15:51:00

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