零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BA301N | Gas Discharge Tube | BencentShenzhen Bencent Electronics Co., Ltd. 檳城電子深圳市檳城電子股份有限公司 | Bencent | |
Low Capacitance and Insertion Loss | BencentShenzhen Bencent Electronics Co., Ltd. 檳城電子深圳市檳城電子股份有限公司 | Bencent | ||
SiliconEpitaxialPlanarDiodes FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SURFACEMOUNTSWITCHINGDIODE Features FastSwitchingSpeed SurfaceMountPackageIdeallySuitedforAutomaticInsertion ForGeneralPurposeSwitchingApplications HighConductance FitsonSOD-323/SOT-23Footprint | TRSYS Transys Electronics | TRSYS | ||
HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES VOLTAGE120to250VoltsPOWER300mWatts FEATURES ?FastswitchingSpeed. ?SurfaceMountPackageIdeallySuitedForAutomaticInsertion. ?SiliconEpitaxalPlanarConstruction. ?IncompliancewithEURoHS2002/95/ECdirectives | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
SmallSignalSwitchingDiodes,HighVoltage FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
SwitchingDiodes Features ?SavingSpace ?SiliconEpitaxialPlanarDiodes ?HermeticSealedParts ?FitsontoSOD-323/SOT-23footprints ?ElectricaldataidenticalwiththedevicesBAV100…BAV103 ?MoistureSensitivityLevel1 ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSComplian | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
120VDetectionswitchtube | SUNMATE | |||
SwitchingDiode Features ?SiliconEpitaxialPlanarDiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD323/SOT23footprints ?Electricaldataidenticalwiththedevices BAV100...BAV103/BAV200...BAV203 Applications ?Generalpurpose MechanicalData ?Case:MicroMELFGlassCase ?Weigh | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
SURFACEMOUNTFASTSWITCHINGDIODE Features ●Hermeticsealedparts ●Savingspace ●SiliconEpitaxialPlanarDiodes | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
SmallSignalSwitchingDiodes,HighVoltage FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices BAV100toBAV103,BAV200toBAV203 ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SmallSignalSwitchingDiodes,HighVoltage FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BaseboardforoneTMCM-301/TMCM-341andupto3TMCM-035 | TRINAMIC TRINAMIC Motion Control GmbH & Co. KG. | TRINAMIC | ||
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuiltinBiasingCircuitMOSFETICVHFRFAmplifier Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BuiltinBiasingCircuitMOSFETICVHFRFAmplifier Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BuiltinBiasingCircuitMOSFETICVHFRFAmplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
BENCENT |
24+ |
SMD |
9106 |
原裝正品,假一罰十! |
詢價(jià) | ||
STERHOPE |
2016+ |
SMD |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
BENCENT |
19+ |
SMD |
65525 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | ||
BENCENT |
18+ |
SMD |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
BENCENT |
09+ |
SMD |
2200 |
原廠原裝倉(cāng)庫現(xiàn)貨,歡迎咨詢 |
詢價(jià) | ||
BENCENT |
24+ |
SMD |
1200 |
全新原裝數(shù)量均有多電話咨詢 |
詢價(jià) | ||
BENCENT |
20+ |
SMD |
32970 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
BENCENT |
2021+ |
1812 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
CHINA |
21+ |
SMD |
2316 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
BENCENT |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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