B11G2327N70D分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

B11G2327N70D屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的B11G2327N70D晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using

Ampleon's state of the art LDMOS technology. The carrier and peaking device, input

splitter, output combiner and pre-match are integrated in a single package. This multiband

device is perfectly suited as general purpose driver in the frequency range 2300 MHz to

2700 MHz. Available in PQFN outline.

Features and benefits

? Integrated input splitter

? Integrated output combiner

? 20? output impedance thanks to integrated pre-match

? High linearity

? Designed for large RF and instantaneous bandwidth operation

? Independent control of carrier and peaking bias

? Integrated bias gate switch

? Integrated ESD protection

? Source impedance 50 ?; high power gain

? For RoHS compliance see the product details on the Ampleon website

Applications

? Macrocell base station driver

? Microcell base station

? 5G mMIMO

? W-CDMA/LTE

? Active antenna

? General purpose applications