B11G1822N60D

LDMOS 2-stage integrated Doherty MMIC

Generaldescription TheB11G1822N60Disadualsection2-stagefullyintegratedDohertyMMICsolution usingAmpleon'sstateoftheartLDMOStechnology.Thecarrierandpeakingdevice,input splitter,outputcombinerandpre-matchareintegratedineachsection.Thismultiband deviceisperfec

B11G1822N60D

LDMOS 2-stage integrated Doherty MMIC

The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purp; ? Integrated input splitter\n? Integrated output combiner\n? 20 Ω output impedance thanks to integrated pre-match\n? High linearity\n? Designed for large RF and instantaneous bandwidth operation\n? Independent control of carrier and peaking bias\n? Integrated bias gate switch\n? Integrated ESD prote;

B11G1822N60DX

LDMOS 2-stage integrated Doherty MMIC

Generaldescription TheB11G1822N60Disadualsection2-stagefullyintegratedDohertyMMICsolution usingAmpleon'sstateoftheartLDMOStechnology.Thecarrierandpeakingdevice,input splitter,outputcombinerandpre-matchareintegratedineachsection.Thismultiband deviceisperfec

B11G1822N60DYZ

LDMOS 2-stage integrated Doherty MMIC

Generaldescription TheB11G1822N60Disadualsection2-stagefullyintegratedDohertyMMICsolution usingAmpleon'sstateoftheartLDMOStechnology.Thecarrierandpeakingdevice,input splitter,outputcombinerandpre-matchareintegratedineachsection.Thismultiband deviceisperfec

B11G1822N60DYZ

Package：36-QFN 裸焊盤；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：B11G1822N60DYZ/PQFN-12X7/REELDP