AZ128S-08F.R7G中文資料晶焱科技數(shù)據(jù)手冊PDF規(guī)格書

Features

ESD protected for 8 high speed I/O channels

Provide ESD protection for each channel to

IEC 61000-4-2 (ESD) ±18kV (air) / ±16kV (contact)

IEC 61000-4-4 (EFT) 40A (5/50ns)

IEC 61000-4-5 (Lightning) 6.5A (8/20μs)

For low operating voltage of 1.5V and below

Ultra low capacitance: 0.5pF typical

Fast turn-on and low clamping voltage

Array of ESD rated diodes with internal

equivalent TVS (Transient Voltage

Suppression) diode

Low leakage current

Solid-state silicon-avalanche and active circuit

triggering technology

Simplified layout for high speed differential

signaling channels

Green part

Applications

V-by-One Interface

LVDS Interface

DisplayPort Interface

Thunderbolt Interface

USB 3.0

Description

AZ128S-08F is a design which includes ESD

rated diode arrays to protect high speed data

interfaces in an electronic system. The

AZ128S-08F has been specifically designed to

protect sensitive components which are

connected to data and transmission lines from

over-voltage damage and latch-up caused by

Electrostatic Discharging (ESD).

AZ128S-08F is a unique design which includes

low capacitance steering diodes and a unique

design of clamping cell which is an equivalent

TVS diode in a single package. During transient

conditions, the steering diodes direct the

transient to the ground line, protecting any

downstream components.

AZ128S-08F may be used to meet the ESD

immunity requirements of IEC 61000-4-2, Level 4

(±15kV air, ±8kV contact discharge).