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AUIRFR2607Z中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

AUIRFR2607Z
廠商型號

AUIRFR2607Z

功能描述

HEXFET? Power MOSFET

文件大小

288.39 Kbytes

頁面數(shù)量

13

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-21 17:29:00

AUIRFR2607Z規(guī)格書詳情

V(BR)DSS 75V

RDS(on) typ. 17.6m?

max. 22m?

ID (Silicon Limited) 45A

ID (Package Limited) 42A

Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

產(chǎn)品屬性

  • 型號:

    AUIRFR2607Z

  • 功能描述:

    MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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