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AUIRF9952Q中文資料英飛凌數據手冊PDF規(guī)格書
AUIRF9952Q規(guī)格書詳情
Description
Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
? Advanced Planar Technology
? Low On-Resistance
? Logic Level Gate Drive
? Dual N and P Channel MOSFET
? Dynamic dv/dt Rating
? 150°C Operating Temperature
? Fast Switching
? Full Avalanche Rated
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free, RoHS Compliant
? Automotive Qualified *
產品屬性
- 型號:
AUIRF9952Q
- 功能描述:
MOSFET AUTO 30V 1 N-CH HEXFET 100mOhms
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
8130 |
原裝現貨,當天可交貨,原型號開票 |
詢價 | ||
Infineon(英飛凌) |
23+ |
SOP8 |
7350 |
現貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
VB |
24+ |
SO-8 |
15868 |
原裝正品,歡迎來電咨詢! |
詢價 | ||
IR |
2020+ |
SO-8 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
20+ |
SOP-8 |
63258 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
14+ |
SO-8 |
30000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
1742+ |
SOP-8 |
98215 |
只要網上有絕對有貨!只做原裝正品! |
詢價 | ||
IR |
2022+ |
SOP-8 |
30000 |
進口原裝現貨供應,絕對原裝 假一罰十 |
詢價 | ||
IR |
14+ |
SO-8 |
4880 |
詢價 | |||
Infineon Technologies |
21+ |
8SO |
13880 |
公司只售原裝,支持實單 |
詢價 |