ATF22LV10CZ-25JI集成電路（IC）的PLD（可編程邏輯器件）規(guī)格書(shū)PDF中文資料

Description

The ATF22LV10CZ/CQZ is a high-performance CMOS (electrically erasable) programmable logic device (PLD) that utilizes Atmel’s proven electrically erasable Flash memory technology and provides 25 ns speed with standby current of 25 μA maximum. All speed ranges are specified over the 3.0V to 5.5V range for industrial and commercial temperature ranges.

The ATF22LV10CZ/CQZ provides a low-voltage and edge-sensing “zero” power CMOS PLD solution with “zero” standby power (5 μA typical). The ATF22LV10CZ/CQZ powers down automatically to the zero power mode through Atmel’s patented Input Transition Detection (ITD) circuitry when the device is idle. The ATF22LV10CZ/CQZ is capable of operating at supply voltages down to 3.0V. Pin “keeper” circuits on input and output pins hold pins to their previous logic levels when idle, which eliminate static power consumed by pull-up resistors. The “CQZ” combines this low high-frequency ICC of the “Q” design with the “Z” feature.

The ATF22LV10CZ/CQZ macrocell incorporates a variable product term architecture. Each output is allocated from 8 to 16 product terms which allows highly complex logic functions to be realized. Two additional product terms are included to provide synchronous reset and asynchronous reset. These additional product terms are common to all 10 registers and are automatically cleared upon power-up. Register Preload simplifies testing. A security fuse prevents unauthorized copying of programmed fuse patterns.

Features

? 3.0V to 5.5V Operating Range

? Lowest Power in It Class

? Advanced Low-voltage, Zero-power, Electrically Erasable Programmable Logic Device

? “Zero” Standby Power (25 μA Maximum) (Input Transition Detection)

? Low-voltage Equivalent of ATF22V10CZ

? Ideal for Battery Powered Systems

? CMOS- and TTL-compatible Inputs and Outputs

? Inputs are 5V Tolerant

? Latch Feature Hold Inputs to Previous Logic States

? EE Technology

– Reprogrammable

– 100 Tested

? High-reliability CMOS Process

– 20-year Data Retention

– 10,000 Erase/Write Cycles

– 2,000V ESD Protection

– 200 mA Latch-up Immunity

? Commercial and Industrial Temperature Ranges

? Dual Inline and Surface Mount Standard Pinouts

? Green Package Options (Pb/Halide-free/RoHS Compliant) Available