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AS29LV160B

3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

Features ?Organization:2M×8/1M×16 ?Sectorarchitecture -One16K;two8K;one32K;andthirty-one64Kbytesectors -One8K;two4K;one16K;andthirty-one32Kwordsectors -Bootcodesectorarchitecture—T(top)orB(bottom) -Eraseanycombinationofsectorsorfullchip

ALSC

Alliance Semiconductor Corporation

AS29LV160T

3W2Mx8/1Mx16-CMOSFlashEEPROM

Features ?Organization:2M×8/1M×16 ?Sectorarchitecture -One16K;two8K;one32K;andthirty-one64Kbytesectors -One8K;two4K;one16K;andthirty-one32Kwordsectors -Bootcodesectorarchitecture—T(top)orB(bottom) -Eraseanycombinationofsectorsorfullchip

ALSC

Alliance Semiconductor Corporation

EN29LV160

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160A

16MEGABIT(2048KX8-BIT/1024KX16-BIT)FLASHMEMORY

GENERALDESCRIPTION TheEN29LV160Aisa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimesasfast

EON

Eon Silicon Solution Inc.

EN29LV160B

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemory

EON

Eon Silicon Solution Inc.

EN29LV160C

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160Cisa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160Cfeatures3.0Vvoltagereadandwriteoperation,withaccesstimesasfast

EON

Eon Silicon Solution Inc.

EN29LV160J

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

[EON] GENERALDESCRIPTION TheEN29LV160Jisa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin10μs.TheEN29LV160Jfeatures3.0Vvoltagereadandwriteoperation,withaccesst

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

ES29LV160D

16Mbit(2Mx8/1Mx16)CMOS3.0Volt-only,BootSectorFlashMemory

EXCELSEMI

Excel Semiconductor Inc.

ES29LV160E

16Mbit(2Mx8/1Mx16)CMOS3.0Volt-only,BootSectorFlashMemory

EXCELSEMI

Excel Semiconductor Inc.

ES29LV160F

16Megabit(2Mx8-Bit/1Mx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

EXCELSEMI

Excel Semiconductor Inc.

HY29LV160

16Mbit(2Mx8/1Mx16)LowVoltageFlashMemory

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

MBM29LV160B

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MBM29LV160BE

16M(2MX8/1MX16)BIT

■GENERALDESCRIPTION TheMBM29LV160TE/BEisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160TE/BEisofferedina48-pinTSOP(I),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwithth

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MBM29LV160T

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160T

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MBM29LV160TE

16M(2MX8/1MX16)BIT

■GENERALDESCRIPTION TheMBM29LV160TE/BEisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160TE/BEisofferedina48-pinTSOP(I),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwithth

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MX29LV160

16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE3VONLYFLASHMEMORY

MCNIXMacronix International

????????????旺宏????????????旺宏電子

MX29LV160AB

16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE3VONLYFLASHMEMORY

MCNIXMacronix International

????????????旺宏????????????旺宏電子

MX29LV160AT

16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE3VONLYFLASHMEMORY

MCNIXMacronix International

????????????旺宏????????????旺宏電子

MX29LV160B

16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE3VONLYFLASHMEMORY

MCNIXMacronix International

????????????旺宏????????????旺宏電子

詳細(xì)參數(shù)

  • 型號(hào)：

    AS29LV160B

  • 制造商：

    ALSC

  • 制造商全稱：

    Alliance Semiconductor Corporation

  • 功能描述：

    3W 2M x 8/1M x 16 - CMOS Flash EEPROM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ALSC
23+
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19960
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ALLIANCE SEMICONDUCTOR
01+
6
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ALN
22+
TSOP
8200
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ALLIANCESEMI
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
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ALLIANCESEMICONDUCTOR
21+
35200
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ANLL
22+
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9852
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ANADIGICS
23+
589610
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ALLIANCESEMI
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NA
1005
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ALLIANCESEMI
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QFP
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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ALLIANCE
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1500
絕對(duì)全新原裝!優(yōu)勢供貨渠道!特價(jià)!請(qǐng)放心訂購!
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更多AS29LV160B供應(yīng)商 更新時(shí)間2024-10-27 15:00:00

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