首頁 >AQW410EHAX>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NAIS |
2011+ |
DIPSOP8 |
20000 |
原裝現(xiàn)貨 |
詢價 | ||
PANASONIC |
20+ |
8-SOP |
3796 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
原裝松下 |
23+ |
8-SOP |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
Panasonic Electric Works |
2022+ |
原廠封裝 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
24+ |
N/A |
48000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
panasoni |
專業(yè)光耦 |
SOP8 |
65800 |
光耦原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NAIS |
200 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
24+ |
DIP-8 |
17 |
詢價 | ||||
NAIS |
09+ |
DIP8 |
4411 |
只售全新原裝貨真實現(xiàn)貨放心查詢 |
詢價 | ||
NAIS |
06+ |
DIP8 |
2000 |
詢價 |
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