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AQV414S

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分類制造商

AQW414

GU(GeneralUse)Type[2-Channel(FormB)Type]

ETCList of Unclassifed Manufacturers

未分類制造商

AQW414

HIGHVOLTAGE,PHOTOMOSRELAY

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

AQW414A

HIGHVOLTAGE,PHOTOMOSRELAY

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etc未分類制造商etc2未分類制造商

AQW414EH

Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype.

FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,

PanasonicPanasonic Semiconductor

松下松下電器

AQW414EHA

Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype.

FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,

PanasonicPanasonic Semiconductor

松下松下電器

AQW414EHAX

Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype.

FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,

PanasonicPanasonic Semiconductor

松下松下電器

AQW414EHAZ

Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype.

FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,

PanasonicPanasonic Semiconductor

松下松下電器

AQW414S

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分類制造商

AQY414

HIGHVOLTAGE,PHOTOMOSRELAY

[CLOBALcomponents&controls] DESCRIPTION TheAQY414Sisasinglepolesinglethrow(SPST),normallyclose(NC),MosRelay.therelaycancontrolAcorDCloadscurrentsupto130mA,withasupplyvoltageupto400V.Thedeviceispackagedina4pinSopackage.Thispackageoffersanins

ETCList of Unclassifed Manufacturers

未分類制造商

AQY414EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414EHAZ

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414S

HIGHVOLTAGE,PHOTOMOSRELAY

[CLOBALcomponents&controls] DESCRIPTION TheAQY414Sisasinglepolesinglethrow(SPST),normallyclose(NC),MosRelay.therelaycancontrolAcorDCloadscurrentsupto130mA,withasupplyvoltageupto400V.Thedeviceispackagedina4pinSopackage.Thispackageoffersanins

ETCList of Unclassifed Manufacturers

未分類制造商

AQY414SX

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    AQV414HAZJ

  • 制造商:

    Panasonic Electric Works

供應(yīng)商型號品牌批號封裝庫存備注價格
PEW
23+
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
詢價
24+
SOP-6
312
詢價
NAIS
06+
SOP6
2000
詢價
NAIS
23+
SOP6
7750
全新原裝優(yōu)勢
詢價
NAIS
2016+
SOP6
3500
本公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
原廠正品
23+
SOP
5000
原裝正品,假一罰十
詢價
NAIS
2016+
SOP6
6523
只做進口原裝現(xiàn)貨假一賠十!
詢價
PANASON
2020+
SOP-6
600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
松下
24+
SOP-6
500
“芯達集團”專營軍工百分之百原裝進口
詢價
PANASONIC
22+
原廠原封
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
詢價
更多AQV414HAZJ供應(yīng)商 更新時間2025-1-15 9:30:00